NDC652P
MOSFET P-CH 30V 2.4A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDC652P is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 2.4 A at 25°C. With a maximum power dissipation of 1.6 W (Ta), it offers a low on-resistance (Rds On) of 110 mOhm at 3.1 A and 10 V gate drive. The NDC652P utilizes Metal Oxide technology and is housed in a SuperSOT™-6 package, specifically a SOT-23-6 Thin / TSOT-23-6. Key electrical parameters include a gate charge of 20 nC (Max) at 10 V and input capacitance (Ciss) of 290 pF (Max) at 15 V. It operates across a temperature range of -55°C to 150°C (TJ). This component is commonly found in power management and industrial automation applications. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | -20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 15 V |
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