NDC651N
MOSFET N-CH 30V 3.2A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's NDC651N is an N-Channel Power MOSFET designed for efficient power switching applications. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current capability of 3.2A at 25°C ambient. The device features a low on-resistance (Rds on) of 60mOhm maximum at 4A and 10V Vgs, ensuring minimal conduction losses. With a gate charge (Qg) of 20nC maximum at 10V Vgs, it supports fast switching speeds. The NDC651N is housed in a compact SuperSOT™-6 package, suitable for surface mounting and enabling high power density in thermal management. Its operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 15 V |
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