NDC631N
MOSFET N-CH 20V 4.1A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDC631N is a 20V N-Channel Power MOSFET designed for efficient power switching applications. This component features a low Rds(on) of 60mOhm at 4.1A and 4.5V Vgs, contributing to reduced conduction losses. With a continuous drain current capability of 4.1A (Ta) and a maximum power dissipation of 1.6W (Ta), it is suitable for demanding thermal environments. The device operates with a gate drive voltage range of 2.7V to 4.5V, and its gate charge (Qg) is rated at 14 nC maximum at 4.5V Vgs. The input capacitance (Ciss) is 365 pF at 10V Vds. Packaged in a SuperSOT™-6, this surface mount device offers a compact solution for space-constrained designs. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | 8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 10 V |
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