NDBA180N10BT4H
MOSFET N-CH 100V 180A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NDBA180N10BT4H is an N-Channel power MOSFET designed for high-performance applications. This component features a drain-source breakdown voltage of 100V and a continuous drain current capability of 180A at 25°C, with a maximum power dissipation of 200W at the case. The device exhibits a low on-resistance of 2.8mOhm at 50A and 15V, facilitated by its Metal Oxide technology. Key electrical characteristics include a gate charge of 95nC at 10V and input capacitance of 6950pF at 50V. Designed for surface mounting, it is housed in a TO-263 (D2PAK) package. Operating temperature range extends up to 175°C (TJ). This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 50 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
