NDBA170N06AT4H
MOSFET N-CH 60V 170A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDBA170N06AT4H is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 170A at 25°C. It offers a low on-resistance (Rds On) of 3.3mOhm maximum at 50A and 10V gate drive, facilitating minimal conduction losses. The device is housed in a TO-263 (D2PAK) surface-mount package, enabling robust thermal management with a maximum power dissipation of 90W at the case temperature. Key electrical parameters include a gate charge (Qg) of 280 nC maximum at 10V and input capacitance (Ciss) of 15800 pF maximum at 20V. The operating junction temperature range extends to 150°C. This MOSFET is suitable for demanding applications across automotive and industrial power systems. The NDBA170N06AT4H is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15800 pF @ 20 V |
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