NDBA100N10BT4H
MOSFET N-CH 100V 100A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDBA100N10BT4H is a 100V N-Channel MOSFET designed for high-current applications. This component features a maximum continuous drain current (Id) of 100A at 25°C (Ta) and a power dissipation of 110W (Tc). The device offers a low on-resistance (Rds On) of 6.9mOhm at 50A and 15V drive voltage. Its D2PAK (TO-263-3) surface mount package is suitable for demanding thermal management. Typical applications include power supplies, automotive systems, and motor control, leveraging its 175°C operating temperature capability. Key electrical parameters include a gate charge (Qg) of 35nC at 10V and input capacitance (Ciss) of 2950pF at 50V. This MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 50 V |
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