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NDB7060

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NDB7060

MOSFET N-CH 60V 75A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi NDB7060 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and supports a continuous drain current of 75A at 25°C. Its low on-resistance, specified at a maximum of 13mOhm at 40A and 10V Vgs, ensures efficient power transfer. With a maximum power dissipation of 150W at the case temperature, it is suitable for high-power switching and motor control applications. The device offers a gate charge of 115 nC at 10V and input capacitance of 3600 pF at 25V, facilitating fast switching speeds. Packaged in a TO-263-3 (D2PAK) surface-mount configuration, the NDB7060 is ideal for use in automotive, industrial power supplies, and motor drive systems. It operates within a temperature range of -65°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V

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