NDB6060
MOSFET N-CH 60V 48A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NDB6060 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 48A at 25°C (Tc). With a maximum on-resistance (Rds On) of 25mOhm at 24A and 10V, it minimizes conduction losses. The MOSFET offers a gate charge (Qg) of 70 nC typical at 10V and an input capacitance (Ciss) of 1800 pF maximum at 25V. Engineered for thermal performance, it dissipates up to 100W (Tc) and is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient heat dissipation. Operating across a wide temperature range of -65°C to 175°C (TJ), the NDB6060 is suitable for demanding applications in power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
