NDB603AL
MOSFET N-CH 30V 25A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDB603AL is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 25A at 25°C (Tc). With a maximum on-resistance (Rds On) of 22mOhm at 25A and 10V, it ensures low conduction losses. The device offers a power dissipation of 50W (Tc).
The NDB603AL is housed in a surface-mount TO-263-3, D2PAK package, facilitating automated assembly. Key electrical characteristics include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1100 pF at 15V. Its operating temperature range is -65°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial power control, and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
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