NDB6020P
MOSFET P-CH 20V 24A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDB6020P is a P-Channel MOSFET designed for efficient power switching applications. This component offers a continuous drain current of 24A (Tc) at 25°C and a drain-source voltage (Vdss) of 20V. The Rds On is specified at a maximum of 50mOhm at 12A and 4.5V gate drive. Key parameters include a gate charge (Qg) of 35 nC at 5V and an input capacitance (Ciss) of 1590 pF at 10V. The device features a maximum power dissipation of 60W (Tc) and operates across a temperature range of -65°C to 175°C (TJ). The NDB6020P is housed in a TO-263 (D2PAK) surface mount package, suitable for high-density board designs. This MOSFET is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 10 V |
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