MVB50P03HDLT4G
MOSFET P-CH 30V 50A D2PAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MVB50P03HDLT4G is a P-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) rating of 50A at 25°C, with a maximum power dissipation of 125W (Tc). The low on-resistance of 25mOhm @ 25A, 5V, coupled with a gate charge (Qg) of 100 nC @ 5V, ensures efficient switching performance. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for surface mount integration via its TO-263-3, D2PAK package. The MVB50P03HDLT4G meets AEC-Q101 qualification standards, making it a robust choice for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
| Qualification | AEC-Q101 |
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