MTY100N10E
MOSFET N-CH 100V 100A TO264Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTY100N10E is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 100A at 25°C (Tc). With a low on-resistance (Rds On) of 11mOhm at 50A and 10V, it offers efficient power handling, supporting a maximum power dissipation of 300W (Tc). The device utilizes MOSFET technology and is packaged in a TO-264-3, TO-264AA (TO-264) through-hole package, suitable for robust thermal management. Key electrical parameters include a gate charge (Qg) of 378 nC at 10V and input capacitance (Ciss) of 10640 pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-264 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 378 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10640 pF @ 25 V |