MTW32N20EG
MOSFET N-CH 200V 32A TO247Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTW32N20EG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 32A at 25°C (Tc), with a maximum power dissipation of 180W (Tc). The Rds(On) is specified at a maximum of 75mOhm at 16A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 120 nC @ 10V and an input capacitance (Ciss) of 5000 pF @ 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247-3 package for through-hole mounting. This MOSFET is suitable for industrial power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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