MTP6P20E
MOSFET P-CH 200V 6A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi MTP6P20E is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 6A at 25°C. With a maximum On-Resistance (Rds On) of 1 Ohm at 3A and 10V drive, it offers efficient power switching. The MTP6P20E supports a gate drive voltage up to ±20V and exhibits a typical gate charge of 30 nC at 10V. Its input capacitance (Ciss) is 750 pF at 25V. This MOSFET is housed in a standard TO-220-3 through-hole package, capable of dissipating up to 75W at 25°C case temperature. The operating temperature range is -55°C to 150°C (TJ). This component is frequently utilized in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
