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MTP50P03HDLG

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MTP50P03HDLG

MOSFET P-CH 30V 50A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi MTP50P03HDLG is a P-Channel Power MOSFET designed for high-current applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 50A at 25°C, with a maximum power dissipation of 125W (Tc). The MTP50P03HDLG exhibits a low on-resistance (Rds On) of 25mOhm at 25A and 5V gate drive, facilitated by a Gate Charge (Qg) of 100 nC at 5V. It offers a maximum Gate-to-Source Voltage (Vgs) of ±15V and a Threshold Voltage (Vgs(th)) of 2V at 250µA. This component is housed in a standard TO-220AB package, suitable for through-hole mounting. The MTP50P03HDLG operates within an extended temperature range of -55°C to 150°C (TJ) and is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 25A, 5V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4900 pF @ 25 V

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