MTP50P03HDL
MOSFET P-CH 30V 50A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MTP50P03HDL is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 50A at 25°C. The Rds On is specified at a maximum of 25mOhm at 25A and 5V gate drive. With a Power Dissipation rating of 125W (Tc), it is suitable for high-power switching and control functions. The device is packaged in a TO-220AB through-hole configuration and operates across a temperature range of -55°C to 150°C. Key parameters include a Gate Charge (Qg) of 100 nC at 5V and Input Capacitance (Ciss) of 4900 pF at 25V. This MOSFET is utilized in industries such as automotive, industrial automation, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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