MTP2P50E
MOSFET P-CH 500V 2A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MTP2P50E is a P-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 2 A at 25°C. The device offers a low On-Resistance (Rds On) of 6 Ohm maximum at 1 A, 10 V. With a maximum power dissipation of 75 W at 25°C (Tc), it is suitable for demanding power management tasks. Key parameters include a Gate Charge (Qg) of 27 nC maximum at 10 V and Input Capacitance (Ciss) of 1183 pF maximum at 25 V. The MTP2P50E is housed in a TO-220-3 package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1183 pF @ 25 V |
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