MTP23P06VG
MOSFET P-CH 60V 23A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTP23P06VG is a P-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 23A at 25°C. The MTP23P06VG offers a maximum on-resistance (Rds On) of 120mOhm at 11.5A and 10V gate-source voltage. With a maximum power dissipation of 90W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 50 nC at 10V and an input capacitance (Ciss) of 1620 pF at 25V. The device is housed in a standard TO-220-3 package for through-hole mounting. This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
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