MTP23P06V
MOSFET P-CH 60V 23A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTP23P06V is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 23 A at 25°C (Tc). With a maximum power dissipation of 90 W (Tc) and a low on-resistance (Rds On) of 120 mOhm at 11.5 A and 10 V, it delivers efficient power switching. The TO-220AB package facilitates robust thermal management, while the through-hole mounting ensures secure integration. Key parameters include a Gate Charge (Qg) of 50 nC at 10 V and an input capacitance (Ciss) of 1620 pF at 25 V. This MOSFET operates within a temperature range of -55°C to 175°C (TJ). Its characteristics make it suitable for use in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
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