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MTP20N15EG

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MTP20N15EG

MOSFET N-CH 150V 20A TO220AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MTP20N15EG is an N-Channel Power MOSFET designed for demanding applications requiring robust performance. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) rating of 20A at 25°C (Tc). With a maximum power dissipation of 112W (Tc) and a low on-resistance (Rds On) of 130mOhm maximum at 10A and 10V, it ensures efficient power handling. The device utilizes TO-220AB through-hole packaging, facilitating straightforward integration into circuit designs. Key electrical parameters include a gate charge (Qg) of 55.9 nC maximum at 10V and input capacitance (Ciss) of 1627 pF maximum at 25V. The MTP20N15EG operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and industrial automation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)112W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs55.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1627 pF @ 25 V

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