MTP20N15E
MOSFET N-CH 150V 20A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTP20N15E is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 112W. The MTP20N15E offers a low on-resistance (Rds On) of 130mOhm at 10A and 10V, supported by a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 55.9 nC and input capacitance (Ciss) of 1627 pF. Its TO-220AB package ensures robust thermal performance across an operating temperature range of -55°C to 150°C. This MOSFET is suitable for power switching and control circuits in industries such as industrial automation and power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 112W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 55.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1627 pF @ 25 V |
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