MTP12P10G
MOSFET P-CH 100V 12A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MTP12P10G is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 12A at 25°C (Tc). The Rds On is specified at a maximum of 300mOhm at 6A and 10V. With a maximum power dissipation of 75W (Tc), it is suitable for power switching and control circuits. The TO-220-3 package with through-hole mounting is standard for power applications. Key electrical parameters include a gate charge of 50 nC at 10V and input capacitance of 920 pF at 25V. This MOSFET operates across a temperature range of -65°C to 150°C (TJ). It finds utility in various industrial sectors, including automotive and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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