MTP10N10ELG
MOSFET N-CH 100V 10A TO220ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTP10N10ELG is an N-Channel power MOSFET designed for high-efficiency switching applications. This TO-220AB packaged component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a maximum Rds(on) of 220mOhm at 5A and 5V, it offers low conduction losses. Key electrical characteristics include a Gate Charge (Qg) of 15 nC at 5V and an input capacitance (Ciss) of 1040 pF at 25V. The device supports a gate-source voltage (Vgs) range of ±15V and has a threshold voltage (Vgs(th)) of 2V at 250µA. Power dissipation is rated at 40W (Tc) and 1.75W (Ta). This MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 25 V |
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