MTD6P10E
MOSFET P-CH 100V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MTD6P10E is a P-Channel MOSFET with a Drain-Source voltage (Vdss) of 100 V. It offers a continuous drain current (Id) of 6 A at 25°C (Tc) and a maximum Rds On of 660 mOhm at 3 A, 10 V. The device features a gate charge (Qg) of 22 nC at 10 V and input capacitance (Ciss) of 840 pF at 25 V. Designed for surface mount applications, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Power dissipation is rated at 1.75 W (Ta) and 50 W (Tc). This component is suitable for use in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 25 V |
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