MTD6N20ET5G
MOSFET N-CH 200V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD6N20ET5G is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain current (Id) of 6A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 700mOhm at 3A and 10V, it offers a low conduction loss profile. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, enabling high-density board designs. It supports a gate drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±20V. The power dissipation is rated at 1.75W (Ta) and 50W (Tc). This MOSFET is suitable for use in various industrial and consumer electronics applications requiring reliable power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |