MTD6N20ET4G
MOSFET N-CH 200V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD6N20ET4G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 700mOhm at 3A and 10V gate drive, it offers low conduction losses. The device is housed in a TO-252-3 DPAK surface mount package, facilitating automated assembly. Key parameters include a gate charge (Qg) of 21 nC (Max) at 10V and an input capacitance (Ciss) of 480 pF (Max) at 25V. Power dissipation is rated at 1.75W (Ta) and 50W (Tc). The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in industrial power supplies and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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