MTD6N20ET4
MOSFET N-CH 200V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD6N20ET4 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 6A at 25°C (Tc). It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, facilitating efficient heat dissipation. Key electrical characteristics include a maximum Rds(On) of 700mOhm at 3A and 10V, and a gate charge (Qg) of 21nC at 10V. Input capacitance (Ciss) is rated at 480pF maximum at 25V. This MOSFET is suitable for use in automotive, industrial power supply, and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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