MTD6N15T4G
MOSFET N-CH 150V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD6N15T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) capability of 6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 300mOhm at 3A and 10V Vgs, it offers efficient switching. The DPAK (TO-252-3) package facilitates surface mounting. Key electrical parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V. Power dissipation is rated at 1.25W (Ta) and 20W (Tc). This MOSFET is suitable for use in automotive, industrial, and power supply applications. Operating temperature range is -65°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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