MTD6N15T4
MOSFET N-CH 150V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD6N15T4 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Current rating (Id) of 6A at 25°C (Tc). Its low on-resistance, specified as 300mOhm maximum at 3A, 10V, minimizes conduction losses. The device exhibits a gate charge (Qg) of 30nC maximum at 10V and an input capacitance (Ciss) of 1200pF maximum at 25V, facilitating high-speed switching performance.
Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, the MTD6N15T4 is suitable for automated assembly processes. The threshold voltage (Vgs(th)) is 4.5V maximum at 1mA. This MOSFET is commonly utilized in power supplies, motor control, and general-purpose power switching within the automotive and industrial sectors. The component is supplied in Cut Tape (CT).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 3A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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