MTD5P06VT4GV
MOSFET P-CH 60V 5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD5P06VT4GV is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5A at 25°C. With a maximum on-resistance (Rds On) of 450mOhm at 2.5A and 10V Vgs, it offers low conduction losses. The device boasts a gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 510 pF at 25V, facilitating fast switching speeds.
This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. It offers substantial power dissipation capabilities, rated at 40W at the case temperature (Tc) and 2.1W at the ambient temperature (Ta). The operating temperature range is from -55°C to 175°C (TJ). The MTD5P06VT4GV is frequently utilized in automotive and industrial power management systems, including power supplies, motor control, and battery management. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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