MTD5P06VT4G
MOSFET P-CH 60V 5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi MTD5P06VT4G is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 450mOhm at 2.5A and 10V Vgs, it offers low conduction losses. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting and providing excellent thermal management with a power dissipation of 40W (Tc). Key parameters include a Gate Charge (Qg) of 20 nC at 10V and Input Capacitance (Ciss) of 510 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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