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MTD3055VL

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MTD3055VL

MOSFET N-CH 60V 12A TO252-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi MTD3055VL is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C. The device exhibits a low on-resistance of 180mOhm maximum at 6A and 5V gate drive, contributing to reduced conduction losses. With a gate charge of 10nC typical at 5V and an input capacitance of 570pF maximum, the MTD3055VL offers robust switching performance. It is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for automated assembly. The operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 48W at 25°C case temperature. This MOSFET finds utility in industries such as consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 6A, 5V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V

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