MTD2955VT4
MOSFET P-CH 60V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTD2955VT4 is a P-Channel Power MOSFET designed for power management applications. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 12 A at 25°C. With a maximum power dissipation of 60 W at 25°C (Tc), this device is suitable for demanding thermal environments. The on-resistance (Rds On) is specified at a maximum of 230 mOhm at 6 A and 10 V gate drive. The MOSFET operates with a gate-source voltage (Vgs) range of ±20 V, and a threshold voltage (Vgs(th)) of 4 V at 250 µA. Key capacitances include input capacitance (Ciss) of 770 pF and gate charge (Qg) of 30 nC, both measured at specific voltage conditions. This component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. It is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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