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MTD20P06HDLT4

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MTD20P06HDLT4

MOSFET P-CH 60V 15A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi MTD20P06HDLT4 is a P-channel MOSFET designed for power switching applications. This device features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 175mOhm at 7.5A and 5V gate drive. With a maximum power dissipation of 72W (Tc), it is suitable for demanding thermal environments. The device utilizes MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 29 nC (Max) at 5V and an input capacitance (Ciss) of 1190 pF (Max) at 25V. The operating temperature range is -55°C to 150°C (TJ). This component finds application in various industrial sectors, including automotive and power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs175mOhm @ 7.5A, 5V
FET Feature-
Power Dissipation (Max)72W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 25 V

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