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MTD20P03HDLT4

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MTD20P03HDLT4

MOSFET P-CH 30V 19A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MTD20P03HDLT4 is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 19A at 25°C, with a maximum power dissipation of 75W. The Rds(On) is specified at 99mOhm maximum at 9.5A and 5V Vgs. Key parameters include a Gate Charge (Qg) of 22.4 nC and Input Capacitance (Ciss) of 1064 pF, both measured at 5V Vgs and 25V Vds respectively. The MOSFET operates over a temperature range of -55°C to 150°C and is available in a TO-252-3, DPAK surface mount package, supplied on tape and reel. This component is suitable for use in automotive, industrial, and consumer electronics power management circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Rds On (Max) @ Id, Vgs99mOhm @ 9.5A, 5V
FET Feature-
Power Dissipation (Max)75W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1064 pF @ 25 V

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