MTD10N10ELT4
MOSFET N-CH 100V 10A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MTD10N10ELT4 is a 100V N-Channel Power MOSFET in a DPAK package, designed for efficient power switching applications. This device offers a continuous drain current of 10A at 25°C (Tc) and a low on-resistance of 220mOhm maximum at 5A, 5V (Vgs). Key parameters include a gate charge of 15 nC maximum at 5V and an input capacitance of 1040 pF maximum at 25V. With a maximum power dissipation of 40W at 25°C (Tc), it is suitable for demanding thermal environments. The operating temperature range is -55°C to 150°C (TJ). This component finds utility in industries such as automotive and industrial power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 25 V |