MTB75N05HDT4
MOSFET N-CH 50V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB75N05HDT4 is an N-channel power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 75 A at 25°C (Tc). With a low on-resistance of 9.5 mOhm maximum at 20 A and 10 V, it minimizes conduction losses. The MOSFET exhibits a gate charge (Qg) of 100 nC at 10 V and an input capacitance (Ciss) of 3900 pF at 25 V. Power dissipation capabilities include 2.5 W (Ta) and 125 W (Tc).
The MTB75N05HDT4 utilizes Metal Oxide technology and is housed in a surface mount D2PAK (TO-263-3, D2PAK) package, supplied on tape and reel. Its operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for various industrial sectors including automotive, power supplies, and motor control. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is 4V at 250µA. The drive voltage requirement for optimal on-resistance is 10V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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