MTB50P03HDLT4G
MOSFET P-CH 30V 50A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB50P03HDLT4G is a P-Channel MOSFET designed for demanding power applications. This device features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50 A at 25°C (Tc). With a low on-resistance (Rds On) of 25 mOhm at 25 A and 5 V gate drive, it minimizes conduction losses. The D2PAK (TO-263-3) package facilitates efficient heat dissipation, supporting up to 125 W of power dissipation at 25°C (Tc). Key parameters include a gate charge (Qg) of 100 nC at 5 V and input capacitance (Ciss) of 4900 pF at 25 V. This component is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C (TJ). It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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