MTB50P03HDLT4
MOSFET P-CH 30V 50A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB50P03HDLT4 is a P-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 50A at 25°C (Tc). The low on-resistance of 25mOhm at 25A and 5V (Vgs) minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 100 nC (max) at 5V and an Input Capacitance (Ciss) of 4900 pF (max) at 25V. The threshold voltage (Vgs(th)) is 2V at 250µA. This MOSFET is housed in a TO-263-3, D2PAK surface mount package, suitable for automated assembly. Applications include power management in automotive systems, industrial motor control, and power supplies. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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