MTB50P03HDLG
MOSFET P-CH 30V 50A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB50P03HDLG is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 50A at 25°C (Tc). With a maximum Rds(on) of 25mOhm at 25A and 5V Vgs, it offers efficient power handling. The device boasts a high power dissipation capability of 125W (Tc) and 2.5W (Ta). Key parameters include a Gate Charge (Qg) of 100 nC at 5V and Input Capacitance (Ciss) of 4900 pF at 25V. The MTB50P03HDLG utilizes a P-Channel MOSFET technology and is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly found in automotive, industrial, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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