MTB30P06VT4G
MOSFET P-CH 60V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi MTB30P06VT4G is a P-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and can handle a continuous drain current of 30A at 25°C (Tc). With a maximum on-resistance (Rds On) of 80mOhm at 15A and 10V Vgs, it offers efficient power switching. The device is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface-mount package, suitable for automated assembly processes. Key electrical characteristics include a gate charge (Qg) of 80 nC max at 10V and input capacitance (Ciss) of 2190 pF max at 25V. It operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in various industrial sectors including automotive and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
