MTB30P06VT4
MOSFET P-CH 60V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB30P06VT4 is a P-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 30A at 25°C (Tc). The low on-resistance (Rds On) of 80mOhm at 15A and 10V gate drive voltage (Vgs) makes it efficient for power switching. It offers a maximum power dissipation of 125W (Tc) in a D2PAK (TO-263-3, D2PAK) surface mount package, ideal for robust thermal management. Key electrical characteristics include input capacitance (Ciss) of 2190pF at 25V and gate charge (Qg) of 80nC at 10V. This device operates across a wide temperature range of -55°C to 175°C (TJ). Applications span automotive, industrial power control, and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
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