MTB2P50ET4G
MOSFET P-CH 500V 2A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB2P50ET4G is a P-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current capability of 2A (Tc). With a surface mount D2PAK package, it offers efficient thermal management. Key electrical specifications include a maximum gate charge (Qg) of 27 nC at 10V and a maximum input capacitance (Ciss) of 1183 pF at 25V. The on-resistance (Rds On) is a maximum of 6 Ohms when conducting 1A with a 10V gate-source voltage. The threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. This MOSFET is utilized in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1183 pF @ 25 V |
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