MTB23P06VT4
MOSFET P-CH 60V 23A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MTB23P06VT4 is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 23 A at 25°C (Ta). With a maximum Rds(On) of 120 mOhm at 11.5 A and 10 V, it offers low conduction losses. The MOSFET supports a gate drive voltage up to 10 V for activating its low on-resistance.
Key parameters include a gate charge (Qg) of 50 nC and input capacitance (Ciss) of 1620 pF at 25 V, which are critical for switching performance in power conversion and motor control circuits. The MTB23P06VT4 boasts a maximum power dissipation of 3 W at ambient temperature and 90 W under controlled case temperature, making it suitable for high-power density designs. Packaged in a TO-263-3, D2PAK surface mount configuration, it is supplied on tape and reel for automated assembly. This component is utilized in industries such as automotive and industrial power management. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
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