MMSF7P03HDR2G
MOSFET P-CH 30V 7A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MMSF7P03HDR2G is a P-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 7 A at 25°C, with a maximum power dissipation of 2.5 W. The on-resistance (Rds On) is specified at 35 mOhm maximum at 5.3 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 75.8 nC at 6 V and input capacitance (Ciss) of 1680 pF at 24 V. The MMSF7P03HDR2G is housed in an 8-SOIC package suitable for surface mounting, operating across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 24 V |
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