MMSF3P02HDR2SG
MOSFET P-CH 20V 5.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel MOSFET, part number MMSF3P02HDR2SG, offers a 20V drain-source breakdown voltage and a continuous drain current of 5.6A at 25°C. This device features a maximum power dissipation of 2.5W and an Rds(on) of 75mOhm at 3A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, with a maximum gate-source voltage rating of ±20V. Input capacitance (Ciss) is 1400pF at 16V, and gate charge (Qg) is 46nC at 10V. The MMSF3P02HDR2SG is housed in an 8-SOIC package and is supplied on tape and reel. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 16 V |
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