MMSF3P02HDR2G
MOSFET P-CH 20V 5.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MMSF3P02HDR2G is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 5.6 A at 25°C, with a maximum power dissipation of 2.5 W (Ta). The Rds On is specified at a maximum of 75 mOhm at 3 A and 10 V Vgs. It operates with a Gate-Source Voltage (Vgs) range of ±20 V and a threshold voltage (Vgs(th)) of 2 V at 250 µA. Key parameters include an input capacitance (Ciss) of 1400 pF at 16 V and a gate charge (Qg) of 46 nC at 10 V. The MMSF3P02HDR2G is available in an 8-SOIC package, suitable for surface mounting, and is supplied on a tape and reel. This device is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 16 V |
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