MMSF3P02HDR2
MOSFET P-CH 20V 5.6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi MMSF3P02HDR2 is a P-Channel MOSFET designed for demanding applications. This component boasts a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 5.6A at 25°C. With a maximum power dissipation of 2.5W (Ta) and a low on-resistance (Rds On) of 75mOhm at 3A and 10V Vgs, it offers efficient power switching. The gate charge (Qg) is rated at 46 nC maximum at 10V Vgs, and input capacitance (Ciss) is 1400 pF maximum at 16V Vds. This device features a P-Channel Metal Oxide technology and is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, delivered on tape and reel. Operating temperature range is from -55°C to 150°C (TJ). Its specifications make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 16 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
