MMFT960T1G
MOSFET N-CH 60V 300MA SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MMFT960T1G is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source voltage (Vdss) of 60 V and a continuous drain current (Id) of 300 mA at 25°C. The on-resistance (Rds On) is specified as a maximum of 1.7 Ohms at 1A and 10V gate-source voltage. With a gate charge (Qg) of 3.2 nC at 10V and input capacitance (Ciss) of 65 pF at 25V, this MOSFET is suitable for various switching and amplification tasks. The device operates within an ambient temperature range of -65°C to 150°C and has a maximum power dissipation of 800mW (Ta). Housed in a SOT-223 (TO-261) package, it is supplied on tape and reel. This component finds application in areas such as consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 25 V |
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