MMFT5P03HDT1
MOSFET P-CH 30V 3.7A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MMFT5P03HDT1 is a P-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 3.7 A at 25°C. With a maximum power dissipation of 1.56 W (Ta), it is suitable for thermal management in compact designs. The low on-resistance (Rds On) of 100 mOhm at 5.2 A and 10 V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 24 nC and input capacitance (Ciss) of 950 pF. The MMFT5P03HDT1 is supplied in a SOT-223 (TO-261) surface mount package, ideal for automated assembly processes. This component is commonly utilized in automotive, industrial, and consumer electronics sectors. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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